TSE:4063Chemicals
How a GaN Substrate Breakthrough Could Shape Shin-Etsu Chemical’s (TSE:4063) Role in Advanced Electronics
IMEC announced that Shin-Etsu Chemical's 300-mm QST substrate, developed in partnership with QROMIS, enabled a record-breaking voltage resistance in GaN power device evaluations, surpassing 800V and addressing key scalability challenges.
This advance could accelerate the mass adoption of large-diameter GaN devices in fast-growing areas like AI data centers, electric vehicles, and industrial power systems.
We'll examine how Shin-Etsu Chemical's breakthrough in large-diameter GaN substrate...