View Financial Health4DS Memory 배당 및 자사주 매입배당 기준 점검 0/64DS Memory 배당금을 지급한 기록이 없습니다.핵심 정보n/a배당 수익률-48.1%자사주 매입 수익률총 주주 수익률-48.1%미래 배당 수익률n/a배당 성장률n/a다음 배당 지급일n/a배당락일n/a주당 배당금n/a배당 성향n/a최근 배당 및 자사주 매입 업데이트업데이트 없음모든 업데이트 보기Recent updates공시 • Oct 024DS Memory Limited, Annual General Meeting, Nov 20, 20254DS Memory Limited, Annual General Meeting, Nov 20, 2025. Location: conference room, quest kings park, 54 kings park road, west perth wa Australia공시 • Jan 17+ 1 more update4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million.4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million. Security Name: Ordinary Shares Security Type: Common Stock Securities Offered: 166,666,666 Price\Range: AUD 0.036 Discount Per Security: AUD 0.00216 Security Features: Attached Options Transaction Features: Subsequent Direct Listing공시 • Oct 104DS Memory Limited, Annual General Meeting, Nov 28, 20244DS Memory Limited, Annual General Meeting, Nov 28, 2024. Location: at the conference room, quest kings park, 54 kings park road, west perth wa, Australia공시 • May 234DS Memory Limited Unveils New Interface Switching Reram Technology for Faster and Energy Efficient Memory for AI Processing4DS Memory Limited announced a new type of ReRAM technology for AI processing, bringing high-bandwidth, high-endurance persistent memory for big data and neural net applications. 4DS' Interface Switching based on PCMO (Praseodymium, Calcium, Manganese, Oxygen) ReRAM technology delivers significant advantages over other filamentary ReRAM technologies and is the first company to develop this high-speed, high-endurance, persistent non-volatile technology on an advanced CMOS node. One of the biggest challenges to the AI market is that traditional CPU architectures cannot efficiently handle the massive volumes of data that must be read into the chip, processed, and the results written back out of the chip. While new chip architectures are bringing the memory in with the compute (Compute in Memory), this approach is limited by the type of memory they can use that can be fast enough and the amount of memory that can be integrated. With these larger models the challenges of compute data backup and recovery has likewise grown. In addition to speed, energy efficiency has also become more increasingly important as AI processing is forecasted to consume 10 times the energy by 2026 compared to 2023, according to the International Energy Agency. Because 4DS requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window (' hidden refresh'), it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age. Key features of 4DS' Area-based ReRAM include the following: Area-based, low current density programming, high endurance and scalable with technology node; Highly responsive with extremely fast single-shot write time of 4.7 ns to deliver low energy per bit writing at DRAM speeds; High bandwidth persistent memory for high performance data protection; High endurance memory with up to 109 endurance demonstrated; Dynamic partitioning: High endurance and high retention sectors can be dynamically allocated with data retention from hours to days to months; High scale and density w 20 nm cell to be demonstrated in the fourth quarter of 2024; Simple integration into any advanced CMOS process using standard fab equipment. 4DS has a development agreement with Belgium-based imec - a world leading research and innovation hub in nano electronics and digital technologies - for a 20nm Mb chip with 1.6B elements to be run at imec in 2024.PCMO ReRAM belongs to a class of Interface Switching ReRAM where the switching mechanism is based on the interface characteristics of the cell. Specifically, the entire interface area is involved in the switching, which is why it is sometimes also called area-based switching. Oxygen ions, which allows conduction through the cell, are moved in and out of the cell by the electric field pulse. When this oxygen is present, the cell conducts and it is said to be SET. Likewise, when the oxygen is removed, the current path is lost and it is said to be RESET. Because the entire interface area is involved the current density is kept at a minimum which contributes to the high endurance of the cell.공시 • Oct 124DS Memory Limited, Annual General Meeting, Nov 30, 20234DS Memory Limited, Annual General Meeting, Nov 30, 2023, at 10:00 W. Australia Standard Time. Location: Conference Room, Quest Kings Park, 54 Kings Park Road, West Perth Western Australia Australia Agenda: To consider the re-election and appointment of Directors.공시 • Feb 084DS Memory Limited Announces Board Changes4DS Memory Limited announced the resignation of Drs. Wilbert van den Hoek as Executive Chairman of 4DS. Drs. van den Hoek will cease to be the Executive Chairman effective 13 February 2023. The Board has appointed Mr. David McAuliffe as interim Executive Chairman after 13 February 2023 whilst the Company undertakes a search for a USA based Chairman. The key terms of Mr. McAuliffe's appointment as interim Executive Chairman are unchanged from the key terms of his Executive Director role.지급의 안정성과 성장배당 데이터 가져오는 중안정적인 배당: 과거에 FRDS.F 의 주당 배당금이 안정적이었는지 판단하기에는 데이터가 부족합니다.배당금 증가: FRDS.F 의 배당금 지급이 증가했는지 판단하기에는 데이터가 부족합니다.배당 수익률 vs 시장4DS Memory 배당 수익률 vs 시장FRDS.F의 배당 수익률은 시장과 어떻게 비교되나요?구분배당 수익률회사 (FRDS.F)n/a시장 하위 25% (US)1.4%시장 상위 25% (US)4.2%업계 평균 (Semiconductor)0.5%분석가 예측 (FRDS.F) (최대 3년)n/a주목할만한 배당금: 회사가 최근 지급을 보고하지 않았기 때문에 하위 25%의 배당금 지급자에 대해 FRDS.F 의 배당 수익률을 평가할 수 없습니다.고배당: 회사가 최근 지급을 보고하지 않았기 때문에 배당금 지급자의 상위 25%에 대해 FRDS.F 의 배당 수익률을 평가할 수 없습니다.주주 대상 이익 배당수익 보장: 배당금 지급이 수익으로 충당되는지 확인하기 위해 FRDS.F 의 지급 비율을 계산하기에는 데이터가 부족합니다.주주 현금 배당현금 흐름 범위: FRDS.F 에서 지급을 보고하지 않았기 때문에 배당 지속 가능성을 계산할 수 없습니다.높은 배당을 제공하는 우량 기업 찾기7D1Y7D1Y7D1YUS 시장에서 배당이 강한 기업.View Management기업 분석 및 재무 데이터 상태데이터최종 업데이트 (UTC 시간)기업 분석2026/05/24 03:03종가2026/05/18 00:00수익2025/12/31연간 수익2025/06/30데이터 소스당사의 기업 분석에 사용되는 데이터는 S&P Global Market Intelligence LLC에서 제공됩니다. 아래 데이터는 이 보고서를 생성하기 위해 분석 모델에서 사용됩니다. 데이터는 정규화되므로 소스가 제공된 후 지연이 발생할 수 있습니다.패키지데이터기간미국 소스 예시 *기업 재무제표10년손익계산서현금흐름표대차대조표SEC 양식 10-KSEC 양식 10-Q분석가 컨센서스 추정치+3년재무 예측분석가 목표주가분석가 리서치 보고서Blue Matrix시장 가격30년주가배당, 분할 및 기타 조치ICE 시장 데이터SEC 양식 S-1지분 구조10년주요 주주내부자 거래SEC 양식 4SEC 양식 13D경영진10년리더십 팀이사회SEC 양식 10-KSEC 양식 DEF 14A주요 개발10년회사 공시SEC 양식 8-K* 미국 증권에 대한 예시이며, 비(非)미국 증권에는 해당 국가의 규제 서식 및 자료원을 사용합니다.별도로 명시되지 않는 한 모든 재무 데이터는 연간 기간을 기준으로 하지만 분기별로 업데이트됩니다. 이를 TTM(최근 12개월) 또는 LTM(지난 12개월) 데이터라고 합니다. 자세히 알아보기.분석 모델 및 스노우플레이크이 보고서를 생성하는 데 사용된 분석 모델에 대한 자세한 내용은 당사의 Github 페이지에서 확인하실 수 있습니다. 또한 보고서 활용 방법에 대한 가이드와 YouTube 튜토리얼도 제공합니다.Simply Wall St 분석 모델을 설계하고 구축한 세계적 수준의 팀에 대해 알아보세요.산업 및 섹터 지표산업 및 섹터 지표는 Simply Wall St가 6시간마다 계산하며, 프로세스에 대한 자세한 내용은 Github에서 확인할 수 있습니다.분석가 소스4DS Memory Limited는 1명의 분석가가 다루고 있습니다. 이 중 0명의 분석가가 우리 보고서에 입력 데이터로 사용되는 매출 또는 수익 추정치를 제출했습니다. 분석가의 제출 자료는 하루 종일 업데이트됩니다.분석가기관null nullLodge Partners Pty Ltd.
공시 • Oct 024DS Memory Limited, Annual General Meeting, Nov 20, 20254DS Memory Limited, Annual General Meeting, Nov 20, 2025. Location: conference room, quest kings park, 54 kings park road, west perth wa Australia
공시 • Jan 17+ 1 more update4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million.4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million. Security Name: Ordinary Shares Security Type: Common Stock Securities Offered: 166,666,666 Price\Range: AUD 0.036 Discount Per Security: AUD 0.00216 Security Features: Attached Options Transaction Features: Subsequent Direct Listing
공시 • Oct 104DS Memory Limited, Annual General Meeting, Nov 28, 20244DS Memory Limited, Annual General Meeting, Nov 28, 2024. Location: at the conference room, quest kings park, 54 kings park road, west perth wa, Australia
공시 • May 234DS Memory Limited Unveils New Interface Switching Reram Technology for Faster and Energy Efficient Memory for AI Processing4DS Memory Limited announced a new type of ReRAM technology for AI processing, bringing high-bandwidth, high-endurance persistent memory for big data and neural net applications. 4DS' Interface Switching based on PCMO (Praseodymium, Calcium, Manganese, Oxygen) ReRAM technology delivers significant advantages over other filamentary ReRAM technologies and is the first company to develop this high-speed, high-endurance, persistent non-volatile technology on an advanced CMOS node. One of the biggest challenges to the AI market is that traditional CPU architectures cannot efficiently handle the massive volumes of data that must be read into the chip, processed, and the results written back out of the chip. While new chip architectures are bringing the memory in with the compute (Compute in Memory), this approach is limited by the type of memory they can use that can be fast enough and the amount of memory that can be integrated. With these larger models the challenges of compute data backup and recovery has likewise grown. In addition to speed, energy efficiency has also become more increasingly important as AI processing is forecasted to consume 10 times the energy by 2026 compared to 2023, according to the International Energy Agency. Because 4DS requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window (' hidden refresh'), it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age. Key features of 4DS' Area-based ReRAM include the following: Area-based, low current density programming, high endurance and scalable with technology node; Highly responsive with extremely fast single-shot write time of 4.7 ns to deliver low energy per bit writing at DRAM speeds; High bandwidth persistent memory for high performance data protection; High endurance memory with up to 109 endurance demonstrated; Dynamic partitioning: High endurance and high retention sectors can be dynamically allocated with data retention from hours to days to months; High scale and density w 20 nm cell to be demonstrated in the fourth quarter of 2024; Simple integration into any advanced CMOS process using standard fab equipment. 4DS has a development agreement with Belgium-based imec - a world leading research and innovation hub in nano electronics and digital technologies - for a 20nm Mb chip with 1.6B elements to be run at imec in 2024.PCMO ReRAM belongs to a class of Interface Switching ReRAM where the switching mechanism is based on the interface characteristics of the cell. Specifically, the entire interface area is involved in the switching, which is why it is sometimes also called area-based switching. Oxygen ions, which allows conduction through the cell, are moved in and out of the cell by the electric field pulse. When this oxygen is present, the cell conducts and it is said to be SET. Likewise, when the oxygen is removed, the current path is lost and it is said to be RESET. Because the entire interface area is involved the current density is kept at a minimum which contributes to the high endurance of the cell.
공시 • Oct 124DS Memory Limited, Annual General Meeting, Nov 30, 20234DS Memory Limited, Annual General Meeting, Nov 30, 2023, at 10:00 W. Australia Standard Time. Location: Conference Room, Quest Kings Park, 54 Kings Park Road, West Perth Western Australia Australia Agenda: To consider the re-election and appointment of Directors.
공시 • Feb 084DS Memory Limited Announces Board Changes4DS Memory Limited announced the resignation of Drs. Wilbert van den Hoek as Executive Chairman of 4DS. Drs. van den Hoek will cease to be the Executive Chairman effective 13 February 2023. The Board has appointed Mr. David McAuliffe as interim Executive Chairman after 13 February 2023 whilst the Company undertakes a search for a USA based Chairman. The key terms of Mr. McAuliffe's appointment as interim Executive Chairman are unchanged from the key terms of his Executive Director role.