View Financial Health4DS Memory 配当と自社株買い配当金 基準チェック /064DS Memory配当金を支払った記録がありません。主要情報n/a配当利回り-48.1%バイバック利回り総株主利回り-48.1%将来の配当利回りn/a配当成長n/a次回配当支払日n/a配当落ち日n/a一株当たり配当金n/a配当性向n/a最近の配当と自社株買いの更新更新なしすべての更新を表示Recent updatesお知らせ • Oct 024DS Memory Limited, Annual General Meeting, Nov 20, 20254DS Memory Limited, Annual General Meeting, Nov 20, 2025. Location: conference room, quest kings park, 54 kings park road, west perth wa Australiaお知らせ • Jan 17+ 1 more update4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million.4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million. Security Name: Ordinary Shares Security Type: Common Stock Securities Offered: 166,666,666 Price\Range: AUD 0.036 Discount Per Security: AUD 0.00216 Security Features: Attached Options Transaction Features: Subsequent Direct Listingお知らせ • Oct 104DS Memory Limited, Annual General Meeting, Nov 28, 20244DS Memory Limited, Annual General Meeting, Nov 28, 2024. Location: at the conference room, quest kings park, 54 kings park road, west perth wa, Australiaお知らせ • May 234DS Memory Limited Unveils New Interface Switching Reram Technology for Faster and Energy Efficient Memory for AI Processing4DS Memory Limited announced a new type of ReRAM technology for AI processing, bringing high-bandwidth, high-endurance persistent memory for big data and neural net applications. 4DS' Interface Switching based on PCMO (Praseodymium, Calcium, Manganese, Oxygen) ReRAM technology delivers significant advantages over other filamentary ReRAM technologies and is the first company to develop this high-speed, high-endurance, persistent non-volatile technology on an advanced CMOS node. One of the biggest challenges to the AI market is that traditional CPU architectures cannot efficiently handle the massive volumes of data that must be read into the chip, processed, and the results written back out of the chip. While new chip architectures are bringing the memory in with the compute (Compute in Memory), this approach is limited by the type of memory they can use that can be fast enough and the amount of memory that can be integrated. With these larger models the challenges of compute data backup and recovery has likewise grown. In addition to speed, energy efficiency has also become more increasingly important as AI processing is forecasted to consume 10 times the energy by 2026 compared to 2023, according to the International Energy Agency. Because 4DS requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window (' hidden refresh'), it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age. Key features of 4DS' Area-based ReRAM include the following: Area-based, low current density programming, high endurance and scalable with technology node; Highly responsive with extremely fast single-shot write time of 4.7 ns to deliver low energy per bit writing at DRAM speeds; High bandwidth persistent memory for high performance data protection; High endurance memory with up to 109 endurance demonstrated; Dynamic partitioning: High endurance and high retention sectors can be dynamically allocated with data retention from hours to days to months; High scale and density w 20 nm cell to be demonstrated in the fourth quarter of 2024; Simple integration into any advanced CMOS process using standard fab equipment. 4DS has a development agreement with Belgium-based imec - a world leading research and innovation hub in nano electronics and digital technologies - for a 20nm Mb chip with 1.6B elements to be run at imec in 2024.PCMO ReRAM belongs to a class of Interface Switching ReRAM where the switching mechanism is based on the interface characteristics of the cell. Specifically, the entire interface area is involved in the switching, which is why it is sometimes also called area-based switching. Oxygen ions, which allows conduction through the cell, are moved in and out of the cell by the electric field pulse. When this oxygen is present, the cell conducts and it is said to be SET. Likewise, when the oxygen is removed, the current path is lost and it is said to be RESET. Because the entire interface area is involved the current density is kept at a minimum which contributes to the high endurance of the cell.お知らせ • Oct 124DS Memory Limited, Annual General Meeting, Nov 30, 20234DS Memory Limited, Annual General Meeting, Nov 30, 2023, at 10:00 W. Australia Standard Time. Location: Conference Room, Quest Kings Park, 54 Kings Park Road, West Perth Western Australia Australia Agenda: To consider the re-election and appointment of Directors.お知らせ • Feb 084DS Memory Limited Announces Board Changes4DS Memory Limited announced the resignation of Drs. Wilbert van den Hoek as Executive Chairman of 4DS. Drs. van den Hoek will cease to be the Executive Chairman effective 13 February 2023. The Board has appointed Mr. David McAuliffe as interim Executive Chairman after 13 February 2023 whilst the Company undertakes a search for a USA based Chairman. The key terms of Mr. McAuliffe's appointment as interim Executive Chairman are unchanged from the key terms of his Executive Director role.決済の安定と成長配当データの取得安定した配当: FRDS.Fの 1 株当たり配当が過去に安定していたかどうかを判断するにはデータが不十分です。増加する配当: FRDS.Fの配当金が増加しているかどうかを判断するにはデータが不十分です。配当利回り対市場4DS Memory 配当利回り対市場FRDS.F 配当利回りは市場と比べてどうか？セグメント配当利回り会社 (FRDS.F)n/a市場下位25% (US)1.4%市場トップ25% (US)4.2%業界平均 (Semiconductor)0.5%アナリスト予想 (FRDS.F) (最長3年)n/a注目すべき配当: FRDS.Fは最近配当金を報告していないため、配当金支払者の下位 25% に対して同社の配当利回りを評価することはできません。高配当: FRDS.Fは最近配当金を報告していないため、配当金支払者の上位 25% に対して同社の配当利回りを評価することはできません。株主への利益配当収益カバレッジ: FRDS.Fの 配当性向 を計算して配当金の支払いが利益で賄われているかどうかを判断するにはデータが不十分です。株主配当金キャッシュフローカバレッジ: FRDS.Fが配当金を報告していないため、配当金の持続可能性を計算できません。高配当企業の発掘7D1Y7D1Y7D1YUS 市場の強力な配当支払い企業。View Management企業分析と財務データの現状データ最終更新日（UTC時間）企業分析2026/05/24 01:09終値2026/05/18 00:00収益2025/12/31年間収益2025/06/30データソース企業分析に使用したデータはS&P Global Market Intelligence LLC のものです。本レポートを作成するための分析モデルでは、以下のデータを使用しています。データは正規化されているため、ソースが利用可能になるまでに時間がかかる場合があります。パッケージデータタイムフレーム米国ソース例会社財務10年損益計算書キャッシュ・フロー計算書貸借対照表SECフォーム10-KSECフォーム10-Qアナリストのコンセンサス予想+プラス3年予想財務アナリストの目標株価アナリストリサーチレポートBlue Matrix市場価格30年株価配当、分割、措置ICEマーケットデータSECフォームS-1所有権10年トップ株主インサイダー取引SECフォーム4SECフォーム13Dマネジメント10年リーダーシップ・チーム取締役会SECフォーム10-KSECフォームDEF 14A主な進展10年会社からのお知らせSECフォーム8-K* 米国証券を対象とした例であり、非米国証券については、同等の規制書式および情報源を使用。特に断りのない限り、すべての財務データは1年ごとの期間に基づいていますが、四半期ごとに更新されます。これは、TTM（Trailing Twelve Month）またはLTM（Last Twelve Month）データとして知られています。詳細はこちら。分析モデルとスノーフレーク本レポートを生成するために使用した分析モデルの詳細は当社のGithubページでご覧いただけます。また、レポートの使用方法に関するガイドやYoutubeのチュートリアルも掲載しています。シンプリー・ウォールストリート分析モデルを設計・構築した世界トップクラスのチームについてご紹介します。業界およびセクターの指標私たちの業界とセクションの指標は、Simply Wall Stによって6時間ごとに計算されます。アナリスト筋4DS Memory Limited 0 これらのアナリストのうち、弊社レポートのインプットとして使用した売上高または利益の予想を提出したのは、 。アナリストの投稿は一日中更新されます。1 アナリスト機関null nullLodge Partners Pty Ltd.
お知らせ • Oct 024DS Memory Limited, Annual General Meeting, Nov 20, 20254DS Memory Limited, Annual General Meeting, Nov 20, 2025. Location: conference room, quest kings park, 54 kings park road, west perth wa Australia
お知らせ • Jan 17+ 1 more update4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million.4DS Memory Limited has completed a Follow-on Equity Offering in the amount of AUD 6 million. Security Name: Ordinary Shares Security Type: Common Stock Securities Offered: 166,666,666 Price\Range: AUD 0.036 Discount Per Security: AUD 0.00216 Security Features: Attached Options Transaction Features: Subsequent Direct Listing
お知らせ • Oct 104DS Memory Limited, Annual General Meeting, Nov 28, 20244DS Memory Limited, Annual General Meeting, Nov 28, 2024. Location: at the conference room, quest kings park, 54 kings park road, west perth wa, Australia
お知らせ • May 234DS Memory Limited Unveils New Interface Switching Reram Technology for Faster and Energy Efficient Memory for AI Processing4DS Memory Limited announced a new type of ReRAM technology for AI processing, bringing high-bandwidth, high-endurance persistent memory for big data and neural net applications. 4DS' Interface Switching based on PCMO (Praseodymium, Calcium, Manganese, Oxygen) ReRAM technology delivers significant advantages over other filamentary ReRAM technologies and is the first company to develop this high-speed, high-endurance, persistent non-volatile technology on an advanced CMOS node. One of the biggest challenges to the AI market is that traditional CPU architectures cannot efficiently handle the massive volumes of data that must be read into the chip, processed, and the results written back out of the chip. While new chip architectures are bringing the memory in with the compute (Compute in Memory), this approach is limited by the type of memory they can use that can be fast enough and the amount of memory that can be integrated. With these larger models the challenges of compute data backup and recovery has likewise grown. In addition to speed, energy efficiency has also become more increasingly important as AI processing is forecasted to consume 10 times the energy by 2026 compared to 2023, according to the International Energy Agency. Because 4DS requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window (' hidden refresh'), it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age. Key features of 4DS' Area-based ReRAM include the following: Area-based, low current density programming, high endurance and scalable with technology node; Highly responsive with extremely fast single-shot write time of 4.7 ns to deliver low energy per bit writing at DRAM speeds; High bandwidth persistent memory for high performance data protection; High endurance memory with up to 109 endurance demonstrated; Dynamic partitioning: High endurance and high retention sectors can be dynamically allocated with data retention from hours to days to months; High scale and density w 20 nm cell to be demonstrated in the fourth quarter of 2024; Simple integration into any advanced CMOS process using standard fab equipment. 4DS has a development agreement with Belgium-based imec - a world leading research and innovation hub in nano electronics and digital technologies - for a 20nm Mb chip with 1.6B elements to be run at imec in 2024.PCMO ReRAM belongs to a class of Interface Switching ReRAM where the switching mechanism is based on the interface characteristics of the cell. Specifically, the entire interface area is involved in the switching, which is why it is sometimes also called area-based switching. Oxygen ions, which allows conduction through the cell, are moved in and out of the cell by the electric field pulse. When this oxygen is present, the cell conducts and it is said to be SET. Likewise, when the oxygen is removed, the current path is lost and it is said to be RESET. Because the entire interface area is involved the current density is kept at a minimum which contributes to the high endurance of the cell.
お知らせ • Oct 124DS Memory Limited, Annual General Meeting, Nov 30, 20234DS Memory Limited, Annual General Meeting, Nov 30, 2023, at 10:00 W. Australia Standard Time. Location: Conference Room, Quest Kings Park, 54 Kings Park Road, West Perth Western Australia Australia Agenda: To consider the re-election and appointment of Directors.
お知らせ • Feb 084DS Memory Limited Announces Board Changes4DS Memory Limited announced the resignation of Drs. Wilbert van den Hoek as Executive Chairman of 4DS. Drs. van den Hoek will cease to be the Executive Chairman effective 13 February 2023. The Board has appointed Mr. David McAuliffe as interim Executive Chairman after 13 February 2023 whilst the Company undertakes a search for a USA based Chairman. The key terms of Mr. McAuliffe's appointment as interim Executive Chairman are unchanged from the key terms of his Executive Director role.