View Future GrowthSandisk 過去の業績過去 基準チェック /46Sandiskは、平均年間57.2%の収益成長を遂げていますが、 Tech業界の収益は、年間 成長しています。収益は、平均年間6.5% 37.5%収益成長率で 成長しています。 Sandiskの自己資本利益率は72.7%であり、純利益率は56.5%です。主要情報57.15%収益成長率108.97%EPS成長率Tech 業界の成長8.43%収益成長率37.51%株主資本利益率72.66%ネット・マージン56.46%前回の決算情報03 Jul 2026最近の業績更新お知らせ • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026すべての更新を表示Recent updatesお知らせ • Aug 13Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory TechnologyKioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies.お知らせ • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.お知らせ • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026お知らせ • Jul 04Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive WorkloadsSandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.お知らせ • Jun 29+ 6 more updatesSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value BenchmarkSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value Benchmark収支内訳Sandisk の稼ぎ方とお金の使い方。LTMベースの直近の報告された収益に基づく。収益と収入の歴史SET:SNDK80 収益、費用、利益 ( )USD Millions日付収益収益G+A経費研究開発費03 Jul 2620,24811,4336761,32803 Apr 2613,1844,5076411,26502 Jan 268,929-1,0416191,21303 Oct 257,780-1,7406221,16527 Jun 257,355-1,6415731,13228 Mar 257,214-1,4985281,14527 Dec 247,2244624961,13727 Sep 247,013574671,10428 Jun 246,663-6724551,06130 Jun 236,086-2,1435581,16701 Jul 229,7541,0646661,36203 Apr 165,59842854890503 Jan 165,56538856288327 Sep 155,757455592879質の高い収益: SNDK80は 高品質の収益 を持っています。利益率の向上: SNDK80過去に利益を上げました。フリー・キャッシュフローと収益の比較過去の収益成長分析収益動向: SNDK80の収益は過去 5 年間で年間57.2%増加しました。成長の加速: SNDK80は昨年収益を上げたため、収益成長率を 5 年間の平均と比較することは困難です。収益対業界: SNDK80昨年収益を上げたため、昨年の収益成長をTech業界 ( 31.8% ) と比較することは困難です。株主資本利益率高いROE: SNDK80の 自己資本利益率 ( 72.7% ) は 傑出している と考えられます。総資産利益率使用総資本利益率過去の好業績企業の発掘7D1Y7D1Y7D1YTech 、過去の業績が好調な企業。View Financial Health企業分析と財務データの現状データ最終更新日（UTC時間）企業分析2026/08/16 09:58終値2026/08/14 00:00収益2026/07/03年間収益2026/07/03データソース企業分析に使用したデータはS&P Global Market Intelligence LLC のものです。本レポートを作成するための分析モデルでは、以下のデータを使用しています。データは正規化されているため、ソースが利用可能になるまでに時間がかかる場合があります。パッケージデータタイムフレーム米国ソース例会社財務10年損益計算書キャッシュ・フロー計算書貸借対照表SECフォーム10-KSECフォーム10-Qアナリストのコンセンサス予想+プラス3年予想財務アナリストの目標株価アナリストリサーチレポートBlue Matrix市場価格30年株価配当、分割、措置ICEマーケットデータSECフォームS-1所有権10年トップ株主インサイダー取引SECフォーム4SECフォーム13Dマネジメント10年リーダーシップ・チーム取締役会SECフォーム10-KSECフォームDEF 14A主な進展10年会社からのお知らせSECフォーム8-K* 米国証券を対象とした例であり、非米国証券については、同等の規制書式および情報源を使用。特に断りのない限り、すべての財務データは1年ごとの期間に基づいていますが、四半期ごとに更新されます。これは、TTM（Trailing Twelve Month）またはLTM（Last Twelve Month）データとして知られています。詳細はこちら。分析モデルとスノーフレークこのレポートを生成するために使用した分析モデルの詳細は、当社のGitHubページでご覧いただけます。また、レポートの活用方法に関するガイドやYouTubeのチュートリアルも用意しています。シンプリー・ウォールストリート分析モデルを設計・構築した世界トップクラスのチームについてご紹介します。業界およびセクターの指標私たちの業界とセクションの指標は、Simply Wall Stによって6時間ごとに計算されます。アナリスト筋Sandisk Corporation 19 これらのアナリストのうち、弊社レポートのインプットとして使用した売上高または利益の予想を提出したのは、 。アナリストの投稿は一日中更新されます。26 アナリスト機関James FontanelliArete Research Services LLPThomas O'MalleyBarclaysMark NewmanBernstein23 その他のアナリストを表示
お知らせ • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026
お知らせ • Aug 13Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory TechnologyKioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies.
お知らせ • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.
お知らせ • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026
お知らせ • Jul 04Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive WorkloadsSandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.
お知らせ • Jun 29+ 6 more updatesSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value BenchmarkSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value Benchmark