View ValuationSandisk 将来の成長Future 基準チェック /46Sandisk利益と収益がそれぞれ年間14.9%と19.9%増加すると予測されています。EPS は年間 増加すると予想されています。自己資本利益率は 3 年後に28.4% 13.6%なると予測されています。主要情報14.9%収益成長率13.64%EPS成長率Tech 収益成長0%収益成長率19.9%将来の株主資本利益率28.42%アナリストカバレッジGood最終更新日14 Aug 2026今後の成長に関する最新情報お知らせ • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.すべての更新を表示Recent updatesお知らせ • Aug 13Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory TechnologyKioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies.お知らせ • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.お知らせ • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026お知らせ • Jul 04Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive WorkloadsSandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.お知らせ • Jun 29+ 6 more updatesSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value BenchmarkSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value Benchmark業績と収益の成長予測SET:SNDK80 - アナリストの将来予測と過去の財務データ ( )USD Millions日付収益収益フリー・キャッシュフロー営業活動によるキャッシュ平均アナリスト数6/30/202953,78736,20936,61542,38296/30/202857,86938,93538,03337,651186/30/202749,08733,84130,17630,815197/3/202620,24811,43311,49411,671N/A4/3/202613,1844,5074,4604,639N/A1/2/20268,929-1,0411,4491,627N/A10/3/20257,780-1,740516703N/A6/27/20257,355-1,641-12084N/A3/28/20257,214-1,498-337-140N/A12/27/20247,224462-360-178N/A9/27/20247,01357-480-271N/A6/28/20246,663-672-475-309N/A6/30/20236,086-2,143-932-713N/A7/1/20229,7541,0647411,151N/A4/3/20165,598428N/A1,093N/A1/3/20165,565388N/A1,047N/A9/27/20155,757455N/A1,101N/Aもっと見るアナリストによる今後の成長予測収入対貯蓄率: SNDK80の予測収益成長率 (年間14.9% ) は 貯蓄率 ( 2.3% ) を上回っています。収益対市場: SNDK80の収益 ( 14.9% ) はTH市場 ( 10.6% ) よりも速いペースで成長すると予測されています。高成長収益: SNDK80の収益は増加すると予測されていますが、大幅には増加しません。収益対市場: SNDK80の収益 ( 19.9% ) TH市場 ( 8.3% ) よりも速いペースで成長すると予測されています。高い収益成長: SNDK80の収益 ( 19.9% ) 20%よりも低い成長が予測されています。一株当たり利益成長率予想将来の株主資本利益率将来のROE: SNDK80の 自己資本利益率 は、3年後には高くなると予測されています ( 28.4 %)成長企業の発掘7D1Y7D1Y7D1YTech 業界の高成長企業。View Past Performance企業分析と財務データの現状データ最終更新日（UTC時間）企業分析2026/08/16 16:19終値2026/08/14 00:00収益2026/07/03年間収益2026/07/03データソース企業分析に使用したデータはS&P Global Market Intelligence LLC のものです。本レポートを作成するための分析モデルでは、以下のデータを使用しています。データは正規化されているため、ソースが利用可能になるまでに時間がかかる場合があります。パッケージデータタイムフレーム米国ソース例会社財務10年損益計算書キャッシュ・フロー計算書貸借対照表SECフォーム10-KSECフォーム10-Qアナリストのコンセンサス予想+プラス3年予想財務アナリストの目標株価アナリストリサーチレポートBlue Matrix市場価格30年株価配当、分割、措置ICEマーケットデータSECフォームS-1所有権10年トップ株主インサイダー取引SECフォーム4SECフォーム13Dマネジメント10年リーダーシップ・チーム取締役会SECフォーム10-KSECフォームDEF 14A主な進展10年会社からのお知らせSECフォーム8-K* 米国証券を対象とした例であり、非米国証券については、同等の規制書式および情報源を使用。特に断りのない限り、すべての財務データは1年ごとの期間に基づいていますが、四半期ごとに更新されます。これは、TTM（Trailing Twelve Month）またはLTM（Last Twelve Month）データとして知られています。詳細はこちら。分析モデルとスノーフレークこのレポートを生成するために使用した分析モデルの詳細は、当社のGitHubページでご覧いただけます。また、レポートの活用方法に関するガイドやYouTubeのチュートリアルも用意しています。シンプリー・ウォールストリート分析モデルを設計・構築した世界トップクラスのチームについてご紹介します。業界およびセクターの指標私たちの業界とセクションの指標は、Simply Wall Stによって6時間ごとに計算されます。アナリスト筋Sandisk Corporation 19 これらのアナリストのうち、弊社レポートのインプットとして使用した売上高または利益の予想を提出したのは、 。アナリストの投稿は一日中更新されます。26 アナリスト機関James FontanelliArete Research Services LLPThomas O'MalleyBarclaysMark NewmanBernstein23 その他のアナリストを表示
お知らせ • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.
お知らせ • Aug 13Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory TechnologyKioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies.
お知らせ • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.
お知らせ • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026
お知らせ • Jul 04Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive WorkloadsSandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.
お知らせ • Jun 29+ 6 more updatesSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value BenchmarkSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value Benchmark