Annuncio • Jul 28
Navitas Semiconductor Corporation Provides Earnings Guidance for the Third Quarter of 2026 Navitas Semiconductor Corporation provided earnings guidance for the third quarter of 2026. For the quarter, the company expects net revenues to increase to $13.5 million, plus or minus $0.5 million, which at the midpoint represents 28% sequential growth and would mark a return to year-over-year growth. Annuncio • Jul 10
Navitas Semiconductor Responds to Patent Infringement Complaint Filed by Wolfspeed Navitas Semiconductor had been aware of the complaint filed by Wolfspeed in the United States District Court for the District of Delaware. Navitas disputes the allegations in the complaint, will vigorously defend itself and its products against baseless accusations of infringement, and expects to prevail in the litigation. Navitas remains fully committed to executing its growth strategy and delivering innovative products that address the rapidly expanding demand for next-generation power semiconductors. Navitas respects intellectual property and its technology is the product of decades of independent innovation, research, development and investment. The Company is disappointed that Wolfspeed would file the recent baseless litigation in an attempt to seek an advantage that they are unable to gain through healthy competition. Because this matter involves pending litigation, Navitas does not intend to comment further at this juncture. Annuncio • Jul 07
Navitas Semiconductor Corporation to Report Q2, 2026 Results on Jul 27, 2026 Navitas Semiconductor Corporation announced that they will report Q2, 2026 results After-Market on Jul 27, 2026 Annuncio • Jun 10
Navitas Semiconductor Corporation Announces Resignation of Ranbir Singh as Member of Board of Directors, Effective June 9, 2026 Navitas Semiconductor Corporation announced that on June 9, 2026, Dr. Ranbir Singh resigned as a member of the board of directors, effective immediately. Dr. Singh's resignation did not provide any reason for his resignation. Dr. Singh had served as a member of the Board since November 2024 and at the time of his resignation, Dr. Singh served as Chair of the Executive Steering Committee of the Board. Annuncio • May 19
Navitas Semiconductor to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026 Navitas Semiconductor showcased its latest GaN and SiC products for AI data center, energy and grid infrastructure, and industrial electrification at PCIM 2026. Product highlights include the latest in Navitas GaNFast FETs starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V, along with expanded offerings across the GaNSafeTM, GaNSlimTM, and Bi-directional GaN IC product families. Navitas showcased 3300 V, 2300 V, and 1200 V Trench Assisted Planar (TAP) SiC devices using advanced reliability SiCPAKTM press-fit modules, alongside recently announced 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP. For the AI data center, Navitas exhibited two solutions that enable a swifter transition to the 800 VDC standard using GaN: 20 kW 800 V-to-6 V power delivery board aiming 97.5% peak efficiency, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency, reliability, cost-effectiveness, and power density; 10 kW 800 V-to-50 V DC-DC platform featuring 2.1 kW/in³ power density and 98.5% peak efficiency, leveraging the latest 650 V and 100 V GaNFast FETs to deliver industry-leading efficiency, power density, and performance for 800 VDC and ±400 V power architectures. For grid and energy infrastructure, Navitas showcased two SST topologies enabled by Navitas GeneSiC UHV and HV technology: an EPFL-developed full SST cell integrating the primary converter stage, transformer, and secondary conversion stage using a novel single-stage topology, leveraging Navitas 3300 V and 1200 V SiC technology; 50KVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers. Navitas also showcased industrial electrification and motor control inverter solutions based on GaNSense Motor Drive ICs, integrating lossless current sensing, voltage sensing, and temperature protection for improved performance and robustness. In addition, GaNSlim power ICs showcased simplified development of high-efficiency, high-power-density solutions with industry-leading integration for performance computing applications. Navitas presented in panel discussions at PCIM Expo & Conference. Annuncio • May 12
Navitas Semiconductor Corporation has filed a Follow-on Equity Offering. Navitas Semiconductor Corporation has filed a Follow-on Equity Offering.
Security Name: Class A Common Stock
Security Type: Common Stock
Security Name: Class A Common Stock
Security Type: Common Stock
Securities Offered: 6,529,666
Transaction Features: At the Market Offering Annuncio • May 08
Navitas Semiconductor Corporation Provides Earnings Guidance for the Second Quarter 2026 Navitas Semiconductor Corporation provided earnings guidance for the second quarter 2026. For the period, the company's net revenues are expected to increase to $10.0 million, plus or minus $0.5 million, which at the midpoint represents over 16% sequential growth. Annuncio • Apr 16
Navitas Semiconductor Corporation to Report Q1, 2026 Results on May 05, 2026 Navitas Semiconductor Corporation announced that they will report Q1, 2026 results After-Market on May 05, 2026 Annuncio • Apr 14
Navitas Semiconductor Corporation Appoints Gregory M. Fischer as Independent Director to Its Board, Effective April 13, 2026 Navitas Semiconductor Corporation announced the appointment of semiconductor veteran, Gregory M. Fischer, to its Board effective April 13, 2026. Fischer brings extensive semiconductor operating experience to the Board and will stand for reelection in 2027 as a Class III director. He will serve on the Compensation and Executive Steering committees. Fischer has served more than 40 years in the technology industry at leading, publicly-traded semiconductor companies, currently serving as an independent director of Semtech Corporation and previously as senior vice president and general manager at Broadcom Inc. Prior to joining Broadcom, Fischer served in leadership roles at Conexant Systems Inc., Rockwell International Corporation, and Rockwell Collins Avionics Co. Since December 2021, he has been an independent advisor to Gerson Lehrman Group, a professional services firm, and AlphaSights Ltd., an information services company specializing in connecting clients with experts. Fischer also serves on the advisory board of Syntiant Corp., an edge-AI neural processor and modeling company. Fischer earned a B.S. in Electrical Engineering from the Milwaukee School of Engineering and an M.B.A. from the University of Iowa. Annuncio • Mar 18
Navitas Debuts Revolutionary 800 V–6 V Power Delivery Board at NVIDIA GTC 2026 Navitas Semiconductor announced its latest DC-DC power delivery board (PDB) powered by GaNFast technology, enabling direct conversion from 800 V to 6 V in one power stage. This breakthrough solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays, maximizing system efficiency, reliability, and valuable real estate, to deliver a simple power delivery solution to support advanced NVIDIA AI infrastructure. Traditional enterprise and cloud architectures built around legacy 54 V in-rack power distribution are increasingly unable to support the megawatt rack densities demanded by future accelerated computing platforms. Addressing these escalating power requirements requires a fundamental shift in data center power architecture. NVIDIA is leading the transition to 800 VDC data center power infrastructure, and Navitas is delivering the right technologies to support this shift. Navitas’s 800 V–50 V DC-DC platform introduction was a breakthrough in efficiency and power density; however, 800 V to 50 V conversion still required one more power conversion stage to deliver to Voltage Regulator Modules (VRM), which typically operated at 12 V or below. As NVIDIA MGX architecture evolves with the future rack design for high compute and power density systems for greater AI performance, they will require direct 800 V-to-6 V (or 12 V) conversion to maximize rack power density and overall efficiency. Converting directly from 800 V eliminates the 50 V IBC stage, reducing conversion losses, freeing valuable board space, and improving end-to-end system efficiency. Navitas’s 6 V output architecture improves system performance versus other already released PDBs by cutting the VRM conversion ratio in half. Navitas’s 800 V–6 V DC-DC PDB targets to deliver up to 96.5% peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³. Approximately 20% thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximizing transient performance and enhancing power distribution efficiency. Next-gen 800 V–6 V DC-DC PDB eliminates the 48 V IBC stage, increasing system efficiency, reliability, and saving valuable PCB area. The primary side employs 16 × 650 V GaNFast FETs in the latest DFN8×8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of the smallest passives and planar magnetics, delivering maximum power density. The PDB is being showcased at NVIDIA GTC 2026, March 16-19, San Jose, and also at the Navitas booth (#2027) at APEC, March 22–26, in San Antonio, TX. Annuncio • Mar 12
Navitas Semiconductor Launches Top-Side Cooled QDPAK And Low-Profile TO-247-4L Packages In 5th Generation GeneSiC Technology Navitas Semiconductor announced the launch of two new packages: top-side cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its 5th generation GeneSiC technology platform. The latest 1200 V SiC MOSFET products set a new industry benchmark for power density and ruggedness. This technology delivers 35% improvements in RDS,ON × QGD of merit (FoM), and about 25% improvement in QGD /QGS ratio. When coupled with stable high threshold voltage, VGS,TH, of >3 V, this technology ensures immunity against parasitic turn-on, providing a robust and predictable switching performance. The QDPAK package is designed to overcome the thermal limitations of conventional PCB cooling by enabling heat dissipation directly through the top of the package to the heatsink. This optimized thermal path significantly improves heat dissipation efficiency and enables smaller system footprints. The package also minimizes parasitic inductance, supporting cleaner switching and higher efficiency at high frequencies. In addition, the QDPAK platform supports larger die sizes and higher current capability, facilitating the ultra-low RDS(ON) values for high-power applications, while its compact surface-mount profile enables scalable high-volume automated assembly. Compact footprint: Features a 15 mm x 21 mm area with an ultra-low height of only 2.3 mm. Enhanced creepage: Optimized with a groove in the package mold compound that extends creepage to 5 mm without trading off the area of the exposed top-side thermal pad. High-voltage integration: Supports up to 1000 VRMS applications with an epoxy molding compound (EMC) featuring a Comparative Tracking Index (CTI) of >600. Thermal integration: Designed for easier system-level thermal integration via top-side cooling. The low-profile TO-247-4-LP through-hole package variant is an optimized package for power electronics systems where vertical clearance is limited, such as high-density AI power racks. By minimizing the height of the package on the PCBA, this package enables higher power density when compared with systems made with a standard TO-247-4 package. Density optimized: Provides a reduced vertical footprint on the PCBA to support compact form-factor requirements where conventional TO-247-4 package height is a constraint. Manufacturing precision: Optimized with asymmetrical leads (thin leads for gate and Kelvin-source) to improve PCBA manufacturing tolerances. AI Data Center ready: Specifically targeted at applications like AI data center power supplies, where form-factor and maximum allowable height are critical. A white paper on the Trench-Assisted Planar technology is available for free download from the Navitas website. Part Number Package VDS (V) RDS,ON (mO) G5R06MT12QP QDPAK 1200 6.5 G5R12MT12QP QDPAK 1200 12 G5R06MT12LK TO-247-4-LP 1200 6.5 G5R12MT12LK TO-247-4-LP 1200 12 For further information, please visit – Navitas GeneSiC MOSFETs: 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology: To request samples, please contact a Navitas representative or write to info@navitassemi.com. Annuncio • Mar 06
Navitas Semiconductor And École Polytechnique Fédérale De Lausanne Demonstrate Novel Solid-State Transformer Solution For AI Data Center Enabling 800 V DC Implementation Navitas Semiconductor and École Polytechnique Fédérale de Lausanne announced exhibition of a 250kW SST solution at APEC 2026 in San Antonio Texas. The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency. EPFL design uses single stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250 kW power and delivers enhanced performance and modularity. This is built using Navitas GeneSiC ultra-high voltage (UHV) 3300V and high voltage (HV) 1200V Silicon Carbide (SiC) Trench-Assisted Planar MOSFETs and modules. The SST demonstrator is developed as part of the Power Electronics Laboratory’s project HeatingBits, aiming to deploy and showcase the latest technologies inside the EPFL’s actual data center. This novel solid-state transformer platform provides a galvanically isolated, flexible, scalable, and efficient interface between the medium-voltage AC grid and an 800 V-DC data center architecture, while serving as a real-world experimental environment for advanced distributed control. By leveraging Navitas UHV and HV SiC MOSFETs portfolio, EPFL was able to optimize system performance for the highest efficiency and optimal design margins for system robustness and reliability. 
