View ValuationSandisk 향후 성장Future 기준 점검 4/6Sandisk (는) 각각 연간 14.9% 및 19.9% 수익과 수익이 증가할 것으로 예상됩니다. EPS는 연간 13.6% 만큼 성장할 것으로 예상됩니다. 자기자본이익률은 3년 후 28.4% 로 예상됩니다.핵심 정보14.9%이익 성장률13.64%EPS 성장률Tech 이익 성장0%매출 성장률19.9%향후 자기자본이익률28.42%애널리스트 커버리지Good마지막 업데이트14 Aug 2026최근 향후 성장 업데이트공고 • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.모든 업데이트 보기Recent updates공고 • Aug 13Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory TechnologyKioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies.공고 • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.공고 • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026공고 • Jul 04Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive WorkloadsSandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.공고 • Jun 29+ 6 more updatesSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value BenchmarkSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value Benchmark이익 및 매출 성장 예측SET:SNDK80 - 애널리스트 향후 추정치 및 과거 재무 데이터 (USD Millions)날짜매출이익자유현금흐름영업현금흐름평균 애널리스트 수6/30/202953,78736,20936,61542,38296/30/202857,86938,93538,03337,651186/30/202749,08733,84130,17630,815197/3/202620,24811,43311,49411,671N/A4/3/202613,1844,5074,4604,639N/A1/2/20268,929-1,0411,4491,627N/A10/3/20257,780-1,740516703N/A6/27/20257,355-1,641-12084N/A3/28/20257,214-1,498-337-140N/A12/27/20247,224462-360-178N/A9/27/20247,01357-480-271N/A6/28/20246,663-672-475-309N/A6/30/20236,086-2,143-932-713N/A7/1/20229,7541,0647411,151N/A4/3/20165,598428N/A1,093N/A1/3/20165,565388N/A1,047N/A9/27/20155,757455N/A1,101N/A더 보기애널리스트 향후 성장 전망수입 대 저축률: SNDK80 의 연간 예상 수익 증가율(14.9%)이 saving rate(2.3%)보다 높습니다.수익 vs 시장: SNDK80 의 연간 수익(14.9%)이 TH 시장(10.6%)보다 빠르게 성장할 것으로 예상됩니다.고성장 수익: SNDK80 의 수입은 증가할 것으로 예상되지만 상당히 증가하지는 않을 것입니다.수익 대 시장: SNDK80 의 수익(연간 19.9%)이 TH 시장(연간 8.3%)보다 빠르게 성장할 것으로 예상됩니다.고성장 매출: SNDK80 의 수익(연간 19.9%)은 연간 20%보다 느리게 증가할 것으로 예상됩니다.주당순이익 성장 예측향후 자기자본이익률미래 ROE: SNDK80의 자본 수익률은 3년 후 28.4%로 높을 것으로 예상됩니다.성장 기업 찾아보기7D1Y7D1Y7D1YTech 산업의 고성장 기업.View Past Performance기업 분석 및 재무 데이터 상태데이터최종 업데이트 (UTC 시간)기업 분석2026/08/16 18:02종가2026/08/14 00:00수익2026/07/03연간 수익2026/07/03데이터 소스당사의 기업 분석에 사용되는 데이터는 S&P Global Market Intelligence LLC에서 제공됩니다. 아래 데이터는 이 보고서를 생성하기 위해 분석 모델에서 사용됩니다. 데이터는 정규화되므로 소스가 제공된 후 지연이 발생할 수 있습니다.패키지데이터기간미국 소스 예시 *기업 재무제표10년손익계산서현금흐름표대차대조표SEC 양식 10-KSEC 양식 10-Q분석가 컨센서스 추정치+3년재무 예측분석가 목표주가분석가 리서치 보고서Blue Matrix시장 가격30년주가배당, 분할 및 기타 조치ICE 시장 데이터SEC 양식 S-1지분 구조10년주요 주주내부자 거래SEC 양식 4SEC 양식 13D경영진10년리더십 팀이사회SEC 양식 10-KSEC 양식 DEF 14A주요 개발10년회사 공시SEC 양식 8-K* 미국 증권에 대한 예시이며, 비(非)미국 증권에는 해당 국가의 규제 서식 및 자료원을 사용합니다.별도로 명시되지 않는 한 모든 재무 데이터는 연간 기간을 기준으로 하지만 분기별로 업데이트됩니다. 이를 TTM(최근 12개월) 또는 LTM(지난 12개월) 데이터라고 합니다. 자세히 알아보기.분석 모델 및 스노우플레이크이 보고서를 생성하는 데 사용된 분석 모델의 세부 정보는 당사의 GitHub 페이지에서 확인하실 수 있습니다. 또한 보고서 사용 방법에 대한 가이드와 YouTube 튜토리얼도 제공하고 있습니다.Simply Wall St 분석 모델을 설계하고 구축한 세계적 수준의 팀에 대해 알아보세요.산업 및 섹터 지표산업 및 섹터 지표는 Simply Wall St가 6시간마다 계산하며, 프로세스에 대한 자세한 내용은 Github에서 확인할 수 있습니다.분석가 소스Sandisk Corporation는 26명의 분석가가 다루고 있습니다. 이 중 19명의 분석가가 우리 보고서에 입력 데이터로 사용되는 매출 또는 수익 추정치를 제출했습니다. 분석가의 제출 자료는 하루 종일 업데이트됩니다.분석가기관James FontanelliArete Research Services LLPThomas O'MalleyBarclaysMark NewmanBernstein23명의 분석가 더 보기
공고 • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.
공고 • Aug 13Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory TechnologyKioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies.
공고 • Aug 06Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects Revenue to be in the range of $10,300 million - $10,800 million.
공고 • Jul 10Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026
공고 • Jul 04Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive WorkloadsSandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.
공고 • Jun 29+ 6 more updatesSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value BenchmarkSandisk Corporation(NasdaqGS:SNDK) dropped from Russell 2500 Value Benchmark