공고 • Aug 13
Kioxia Corporation and Sandisk Corporation Unveil 9Th-Generation High-Performance 2Tb Qlc 3D Flash Memory Technology Kioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. It also delivers a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices. The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era. Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits. Company names, product names, and service names may be trademarks of third-party companies. 공고 • Aug 06
Sandisk Corporation Provides Earnings Guidance for the Fiscal First Quarter of 2027 Sandisk Corporation provided earnings guidance for the Fiscal First Quarter of 2027. For the period, the company expects
Revenue to be in the range of $10,300 million - $10,800 million. 공고 • Jul 10
Sandisk Corporation to Report Q4, 2026 Results on Aug 05, 2026 Sandisk Corporation announced that they will report Q4, 2026 results on Aug 05, 2026 공고 • Jul 04
Sandisk Corporation Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive Workloads Sandisk Corporation announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59% while delivering up to 4.8Gb/s interface speed, a 33% improvement compared with 8th generation 3D flash memory currently in mass production. Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10% for input and 34% for output compared to the previous BiCS8 generation. NAND flash memory is one of the most scalable semiconductor technologies, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation. The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include: Up to 4.8Gb/s NAND interface speed, a 33% improvement. 332 memory layers with optimized floor plan efficiency, improving bit density by 59%. Enhanced data input/output power efficiency, reducing power consumption by 10% for input and 34% for output. Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation. Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.