View Financial HealthAP Memory Technology 配当と自社株買い配当金 基準チェック /06AP Memory Technology配当を支払う会社であり、現在の利回りは0.73%です。主要情報0.7%配当利回り-0.03%バイバック利回り総株主利回り0.7%将来の配当利回り3.6%配当成長21.7%次回配当支払日n/a配当落ち日n/a一株当たり配当金n/a配当性向90%最近の配当と自社株買いの更新お知らせ • Mar 02AP Memory Technology Corporation Announces Cash Dividend for the Year Ended December 31, 2024AP Memory Technology Corporation announced cash dividend of TWD 7 per share for the year ended December 31, 2024. Total amount of cash distributed to shareholders is TWD 1,137,179,624. Par value of common stock is TWD 5 per share.すべての更新を表示Recent updatesお知らせ • Feb 15AP Memory Technology Corporation to Report Fiscal Year 2025 Results on Feb 26, 2026AP Memory Technology Corporation announced that they will report fiscal year 2025 results on Feb 26, 2026お知らせ • Dec 29AP Memory Technology Corporation, Annual General Meeting, May 08, 2026AP Memory Technology Corporation, Annual General Meeting, May 08, 2026. Location: 2 floor no,3, t`ai yuan 1st st., jhubei city, hsinchu county Taiwanお知らせ • Dec 18AP Memory Broadens S-SiCap™? Technology Deployment to Support Evolving Ai and Hpc NeedsAP Memory announced further advancements in its S-SiCapTM (Stack Silicon Capacitor) product line to address the increasing integration demands of AI servers and high-performance computing (HPC) systems. The S-SiCapTM portfolio includes two product categories --disc discrete silicon capacitors and interposers with silicon capacitors -- designed to support different system architectures and diverse application requirements. The discrete silicon capacitors, S-SiCapTM Gen4, achieves a capacitance density of 3.8 mF/mm2, an increase of more than 50% over the previous generation. To meet the growing demand for higher performance and power efficiency in AI servers and HPC systems, S-SiCapTMGen4 is the first to adopt embedded substrate packaging and is currently in the sampling and process validation stage. Mass production will be introduced progressively starting in 2026. Meanwhile, the S-SiCapTM Interposer utilizes a silicon wafer as its substrate, embedding high-density silicon capacitors within the interposer. This significantly enhances signal integrity and power stability for high-speed I/O applications such as die-to-die, SerDes, and HBM. In collaboration with supply-chain partners, AP Memory has introduced a reticle-stitching technology to enlarge interposer die area allowing more IC chiplets to meet the growing demand for higher-integration advanced packaging solutions. The S-SiCap™? Interposer has completed customer packaging and reliability validation, entering four-reticle mass production at the end of Third Quarter'25. Additional development projects are currently underway.お知らせ • Sep 10AP Memory Technology Corp. Launches ApSRAM - A New Low-Power and High-Performance PSRAMAP Memory announced that its next-generation PSRAM--ApSRAM (Attached-pSRAM)-- has successfully passed customer validation and is scheduled to begin mass production by the end of the year. ApSRAMTM is an advanced version of AP Memory's PSRAM (Pseudo Static Random Access Memory), featuring a new architecture optimized for edge computing and IoT applications. ApSRAMTM delivers a powerful combination of low power consumption, low latency, and high performance. ApSRAMTM adopts a more intuitive control interface that eliminates the need for complex signal calibration, while still effectively supporting higher bandwidth requirements. Compared with conventional PSRAM, ApSRAMTM delivers up to four times the bandwidth and reduces dynamic power consumption to just one-fifth, making it particularly suitable for battery-sensitive devices such as wearables and edge computing applications, where both low power consumption and real-time data exchange are essential. ApSRAMTM enables SoCs to scale memory capacity without requiring redesign, offering density options from 128Mb to 2Gb. It supports I/O voltages from 0.6V to 1.1V, ensuring compatibility with a wide range of logic processes and simplifying system integration. The first ApSRAMTM product is now sampling and will enter mass production by year-end. AP Memory also plans to roll out additional density options to meet the evolving requirements of emerging applications and diverse market needs.お知らせ • Apr 25AP Memory Technology Corporation to Report Q1, 2025 Results on May 02, 2025AP Memory Technology Corporation announced that they will report Q1, 2025 results on May 02, 2025お知らせ • Mar 02AP Memory Technology Corporation Announces Cash Dividend for the Year Ended December 31, 2024AP Memory Technology Corporation announced cash dividend of TWD 7 per share for the year ended December 31, 2024. Total amount of cash distributed to shareholders is TWD 1,137,179,624. Par value of common stock is TWD 5 per share.お知らせ • Feb 20AP Memory Technology Corporation to Report Fiscal Year 2024 Results on Feb 27, 2025AP Memory Technology Corporation announced that they will report fiscal year 2024 results on Feb 27, 2025お知らせ • Dec 30AP Memory Technology Corporation, Annual General Meeting, Apr 30, 2025AP Memory Technology Corporation, Annual General Meeting, Apr 30, 2025. Location: 2 floor no,3, t`ai yuan 1st st., jhubei city, hsinchu county Taiwanお知らせ • Dec 28Ap Memory Technology Corporation Announces Compensation Committee ChangesAP Memory Technology Corporation announced Compensation Committee Changes. Name of the previous position holder: Lan, Ching-Yao. Resume of the previous position holder: Supervisor of President Co. Ltd. Name of the new position holder: Ken Chen. Resume of the new position holder: Brillnics (Taiwan) Inc., Business Director, Global Unichip Corporation, General Manager Taiwan Semiconductor Manufacturing Company Limited, Senior Director. Effective date of the new member is January 1,2025. The resignation will be effective on December 31, 2024. The term of appointment for the new member will begin on the date of appointment and continue until the expiration of the current Board of Directors' term.お知らせ • Oct 23AP Memory Technology Corporation to Report Q3, 2024 Results on Oct 30, 2024AP Memory Technology Corporation announced that they will report Q3, 2024 results on Oct 30, 2024お知らせ • Oct 22+ 2 more updatesAP Memory Technology Corporation Announces the Reassign the Juridical Person Director RepresentativeAP Memory Technology Corporation Announced the reassign the juridical person director representative. Name of legal person: Shanyi Investment Co. Ltd. Name of the previous position holder: Liu, Chin-Hung. Resume of the previous position holder: Senior Vice President of the Company. Name of the new position holder: Yeh, Jui-Pin. Resume of the new position holder: Independent Director of the Company. Reason for the change: Juristic person director re-appoints representative. Effective date of the new appointment of October 21, 2024.お知らせ • Jul 24AP Memory Technology Corporation to Report Q2, 2024 Results on Jul 31, 2024AP Memory Technology Corporation announced that they will report Q2, 2024 results on Jul 31, 2024お知らせ • Apr 28AP Memory Technology Corporation to Report Q1, 2024 Results on May 03, 2024AP Memory Technology Corporation announced that they will report Q1, 2024 results on May 03, 2024お知らせ • Mar 16AP Memory Technology Corporation Announces New Generation Stack Silicon Capacitor (S-Sicap) Gen3 Passed Customer ValidationAP Memory Technology Corporation announced that the new generation stack silicon capacitor (S-SiCapTM) Gen3 has passed customer validation. S-SiCapTM is a high capacitance density and very low profile (<100um thin) silicon capacitor that can be integrated with System-on-Chip (SoC) with advanced packaging processes. The product can also be customized to meet the application requirements of high-end smartphones and High-Performance Computing (HPC) chips. AP Memory's S-SiCapTM uses a stacked capacitor, offering higher capacitance density, smaller size and thinner form factor compared to deep trench capacitors. The capacitance density of S-SiCapTM Gen3 can reach 2.5uF/mm2, with a maximum operating voltage of 1.2V and demonstrate excellent temperature and voltage stability. Additionally, it has low equivalent series inductance (ESL) and low equivalent series resistance (ESR), providing outstanding voltage stability during high-frequency operation. S-SiCapTM provides low profile and customizable product dimensions. In advanced packaging processes, it can meet various integration applications and be placed closer to SoC. For example: S-SiCapTM on the landside, S-SiCapTM embedded in package substrate, S-SiCapTM for 2.5D packaging, and S-SiCapTM in an interposer. AP Memory's President, Hong Chih-Hsun, notes that considering the trend of high-end mobile phones and HPC applications, SoCs need to deliver higher performance. However, this may come with increased power consumption and voltage instability. If customers aim for stable voltage operation in these applications, they will need more robust capacitor technology. AP Memory's S-SiCapTM Gen3 surpasses traditional capacitor technology by providing higher capacitance density, lower profile, and greater application versatility; all of which significantly enhance SoC performance in advanced packaging processes.お知らせ • Mar 03AP Memory Technology Corporation, Annual General Meeting, May 27, 2024AP Memory Technology Corporation, Annual General Meeting, May 27, 2024. Location: No. 88, Zhuangjing 1st Rd., Hsinchu County 302 Zhubei Taiwan Agenda: To report the business of 2023; to consider the 2023 Audit Committee's Review Report; to consider report 2023 employees' profit sharing bonus and directors' compensation; to consider report 2023 earnings distribution; to accept the 2023 Business Report and Financial Statements; to accept the proposal for distribution of 2023 earnings; to consider amendment to the Company's Procedures for the Election of the Directors; to discuss to approve the lifting of non-competition restrictions for directors and their representatives; and to consider other matters.決済の安定と成長配当データの取得安定した配当: APMTはLuxembourg市場で注目すべき配当金を支払っていないため、支払いが安定しているかどうかを確認する必要はありません。増加する配当: APMTはLuxembourg市場で注目すべき配当金を支払っていないため、支払額が増加しているかどうかを確認する必要はありません。配当利回り対市場AP Memory Technology 配当利回り対市場APMT 配当利回りは市場と比べてどうか？セグメント配当利回り会社 (APMT)0.7%市場下位25% (LU)0%市場トップ25% (LU)0%業界平均 (Semiconductor)0%アナリスト予想 (APMT) (最長3年)3.6%注目すべき配当: APMTの配当金 ( 0.73% ) はLuxembourg市場の配当金支払者の下位 25% ( 1.99% ) と比べると目立ったものではありません。高配当: APMTの配当金 ( 0.73% ) はLuxembourg市場の配当金支払者の上位 25% ( 5.41% ) と比較すると低いです。株主への利益配当収益カバレッジ: APMT Luxembourg市場において目立った配当金を支払っていません。株主配当金キャッシュフローカバレッジ: APMT Luxembourg市場において目立った配当金を支払っていません。高配当企業の発掘7D1Y7D1Y7D1YLU 市場の強力な配当支払い企業。View Management企業分析と財務データの現状データ最終更新日（UTC時間）企業分析2026/05/24 20:37終値2026/05/22 00:00収益2026/03/31年間収益2025/12/31データソース企業分析に使用したデータはS&P Global Market Intelligence LLC のものです。本レポートを作成するための分析モデルでは、以下のデータを使用しています。データは正規化されているため、ソースが利用可能になるまでに時間がかかる場合があります。パッケージデータタイムフレーム米国ソース例会社財務10年損益計算書キャッシュ・フロー計算書貸借対照表SECフォーム10-KSECフォーム10-Qアナリストのコンセンサス予想+プラス3年予想財務アナリストの目標株価アナリストリサーチレポートBlue Matrix市場価格30年株価配当、分割、措置ICEマーケットデータSECフォームS-1所有権10年トップ株主インサイダー取引SECフォーム4SECフォーム13Dマネジメント10年リーダーシップ・チーム取締役会SECフォーム10-KSECフォームDEF 14A主な進展10年会社からのお知らせSECフォーム8-K* 米国証券を対象とした例であり、非米国証券については、同等の規制書式および情報源を使用。特に断りのない限り、すべての財務データは1年ごとの期間に基づいていますが、四半期ごとに更新されます。これは、TTM（Trailing Twelve Month）またはLTM（Last Twelve Month）データとして知られています。詳細はこちら。分析モデルとスノーフレーク本レポートを生成するために使用した分析モデルの詳細は当社のGithubページでご覧いただけます。また、レポートの使用方法に関するガイドやYoutubeのチュートリアルも掲載しています。シンプリー・ウォールストリート分析モデルを設計・構築した世界トップクラスのチームについてご紹介します。業界およびセクターの指標私たちの業界とセクションの指標は、Simply Wall Stによって6時間ごとに計算されます。アナリスト筋AP Memory Technology Corporation 2 これらのアナリストのうち、弊社レポートのインプットとして使用した売上高または利益の予想を提出したのは、 。アナリストの投稿は一日中更新されます。4 アナリスト機関Liyen ChenCapital Securities CorporationWei Lun YangJ.P. MorganDaniel YenMorgan Stanley1 その他のアナリストを表示
お知らせ • Mar 02AP Memory Technology Corporation Announces Cash Dividend for the Year Ended December 31, 2024AP Memory Technology Corporation announced cash dividend of TWD 7 per share for the year ended December 31, 2024. Total amount of cash distributed to shareholders is TWD 1,137,179,624. Par value of common stock is TWD 5 per share.
お知らせ • Feb 15AP Memory Technology Corporation to Report Fiscal Year 2025 Results on Feb 26, 2026AP Memory Technology Corporation announced that they will report fiscal year 2025 results on Feb 26, 2026
お知らせ • Dec 29AP Memory Technology Corporation, Annual General Meeting, May 08, 2026AP Memory Technology Corporation, Annual General Meeting, May 08, 2026. Location: 2 floor no,3, t`ai yuan 1st st., jhubei city, hsinchu county Taiwan
お知らせ • Dec 18AP Memory Broadens S-SiCap™? Technology Deployment to Support Evolving Ai and Hpc NeedsAP Memory announced further advancements in its S-SiCapTM (Stack Silicon Capacitor) product line to address the increasing integration demands of AI servers and high-performance computing (HPC) systems. The S-SiCapTM portfolio includes two product categories --disc discrete silicon capacitors and interposers with silicon capacitors -- designed to support different system architectures and diverse application requirements. The discrete silicon capacitors, S-SiCapTM Gen4, achieves a capacitance density of 3.8 mF/mm2, an increase of more than 50% over the previous generation. To meet the growing demand for higher performance and power efficiency in AI servers and HPC systems, S-SiCapTMGen4 is the first to adopt embedded substrate packaging and is currently in the sampling and process validation stage. Mass production will be introduced progressively starting in 2026. Meanwhile, the S-SiCapTM Interposer utilizes a silicon wafer as its substrate, embedding high-density silicon capacitors within the interposer. This significantly enhances signal integrity and power stability for high-speed I/O applications such as die-to-die, SerDes, and HBM. In collaboration with supply-chain partners, AP Memory has introduced a reticle-stitching technology to enlarge interposer die area allowing more IC chiplets to meet the growing demand for higher-integration advanced packaging solutions. The S-SiCap™? Interposer has completed customer packaging and reliability validation, entering four-reticle mass production at the end of Third Quarter'25. Additional development projects are currently underway.
お知らせ • Sep 10AP Memory Technology Corp. Launches ApSRAM - A New Low-Power and High-Performance PSRAMAP Memory announced that its next-generation PSRAM--ApSRAM (Attached-pSRAM)-- has successfully passed customer validation and is scheduled to begin mass production by the end of the year. ApSRAMTM is an advanced version of AP Memory's PSRAM (Pseudo Static Random Access Memory), featuring a new architecture optimized for edge computing and IoT applications. ApSRAMTM delivers a powerful combination of low power consumption, low latency, and high performance. ApSRAMTM adopts a more intuitive control interface that eliminates the need for complex signal calibration, while still effectively supporting higher bandwidth requirements. Compared with conventional PSRAM, ApSRAMTM delivers up to four times the bandwidth and reduces dynamic power consumption to just one-fifth, making it particularly suitable for battery-sensitive devices such as wearables and edge computing applications, where both low power consumption and real-time data exchange are essential. ApSRAMTM enables SoCs to scale memory capacity without requiring redesign, offering density options from 128Mb to 2Gb. It supports I/O voltages from 0.6V to 1.1V, ensuring compatibility with a wide range of logic processes and simplifying system integration. The first ApSRAMTM product is now sampling and will enter mass production by year-end. AP Memory also plans to roll out additional density options to meet the evolving requirements of emerging applications and diverse market needs.
お知らせ • Apr 25AP Memory Technology Corporation to Report Q1, 2025 Results on May 02, 2025AP Memory Technology Corporation announced that they will report Q1, 2025 results on May 02, 2025
お知らせ • Mar 02AP Memory Technology Corporation Announces Cash Dividend for the Year Ended December 31, 2024AP Memory Technology Corporation announced cash dividend of TWD 7 per share for the year ended December 31, 2024. Total amount of cash distributed to shareholders is TWD 1,137,179,624. Par value of common stock is TWD 5 per share.
お知らせ • Feb 20AP Memory Technology Corporation to Report Fiscal Year 2024 Results on Feb 27, 2025AP Memory Technology Corporation announced that they will report fiscal year 2024 results on Feb 27, 2025
お知らせ • Dec 30AP Memory Technology Corporation, Annual General Meeting, Apr 30, 2025AP Memory Technology Corporation, Annual General Meeting, Apr 30, 2025. Location: 2 floor no,3, t`ai yuan 1st st., jhubei city, hsinchu county Taiwan
お知らせ • Dec 28Ap Memory Technology Corporation Announces Compensation Committee ChangesAP Memory Technology Corporation announced Compensation Committee Changes. Name of the previous position holder: Lan, Ching-Yao. Resume of the previous position holder: Supervisor of President Co. Ltd. Name of the new position holder: Ken Chen. Resume of the new position holder: Brillnics (Taiwan) Inc., Business Director, Global Unichip Corporation, General Manager Taiwan Semiconductor Manufacturing Company Limited, Senior Director. Effective date of the new member is January 1,2025. The resignation will be effective on December 31, 2024. The term of appointment for the new member will begin on the date of appointment and continue until the expiration of the current Board of Directors' term.
お知らせ • Oct 23AP Memory Technology Corporation to Report Q3, 2024 Results on Oct 30, 2024AP Memory Technology Corporation announced that they will report Q3, 2024 results on Oct 30, 2024
お知らせ • Oct 22+ 2 more updatesAP Memory Technology Corporation Announces the Reassign the Juridical Person Director RepresentativeAP Memory Technology Corporation Announced the reassign the juridical person director representative. Name of legal person: Shanyi Investment Co. Ltd. Name of the previous position holder: Liu, Chin-Hung. Resume of the previous position holder: Senior Vice President of the Company. Name of the new position holder: Yeh, Jui-Pin. Resume of the new position holder: Independent Director of the Company. Reason for the change: Juristic person director re-appoints representative. Effective date of the new appointment of October 21, 2024.
お知らせ • Jul 24AP Memory Technology Corporation to Report Q2, 2024 Results on Jul 31, 2024AP Memory Technology Corporation announced that they will report Q2, 2024 results on Jul 31, 2024
お知らせ • Apr 28AP Memory Technology Corporation to Report Q1, 2024 Results on May 03, 2024AP Memory Technology Corporation announced that they will report Q1, 2024 results on May 03, 2024
お知らせ • Mar 16AP Memory Technology Corporation Announces New Generation Stack Silicon Capacitor (S-Sicap) Gen3 Passed Customer ValidationAP Memory Technology Corporation announced that the new generation stack silicon capacitor (S-SiCapTM) Gen3 has passed customer validation. S-SiCapTM is a high capacitance density and very low profile (<100um thin) silicon capacitor that can be integrated with System-on-Chip (SoC) with advanced packaging processes. The product can also be customized to meet the application requirements of high-end smartphones and High-Performance Computing (HPC) chips. AP Memory's S-SiCapTM uses a stacked capacitor, offering higher capacitance density, smaller size and thinner form factor compared to deep trench capacitors. The capacitance density of S-SiCapTM Gen3 can reach 2.5uF/mm2, with a maximum operating voltage of 1.2V and demonstrate excellent temperature and voltage stability. Additionally, it has low equivalent series inductance (ESL) and low equivalent series resistance (ESR), providing outstanding voltage stability during high-frequency operation. S-SiCapTM provides low profile and customizable product dimensions. In advanced packaging processes, it can meet various integration applications and be placed closer to SoC. For example: S-SiCapTM on the landside, S-SiCapTM embedded in package substrate, S-SiCapTM for 2.5D packaging, and S-SiCapTM in an interposer. AP Memory's President, Hong Chih-Hsun, notes that considering the trend of high-end mobile phones and HPC applications, SoCs need to deliver higher performance. However, this may come with increased power consumption and voltage instability. If customers aim for stable voltage operation in these applications, they will need more robust capacitor technology. AP Memory's S-SiCapTM Gen3 surpasses traditional capacitor technology by providing higher capacitance density, lower profile, and greater application versatility; all of which significantly enhance SoC performance in advanced packaging processes.
お知らせ • Mar 03AP Memory Technology Corporation, Annual General Meeting, May 27, 2024AP Memory Technology Corporation, Annual General Meeting, May 27, 2024. Location: No. 88, Zhuangjing 1st Rd., Hsinchu County 302 Zhubei Taiwan Agenda: To report the business of 2023; to consider the 2023 Audit Committee's Review Report; to consider report 2023 employees' profit sharing bonus and directors' compensation; to consider report 2023 earnings distribution; to accept the 2023 Business Report and Financial Statements; to accept the proposal for distribution of 2023 earnings; to consider amendment to the Company's Procedures for the Election of the Directors; to discuss to approve the lifting of non-competition restrictions for directors and their representatives; and to consider other matters.